Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench
US7037789B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Feb 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes: forming a trench in a predetermined layer of a semiconductor substrate; heating the substrate having the trench in a non-oxidizing and non-nitridizing atmosphere containing a dopant or a compound that includes the dopant in order to smooth the surfaces defining the trench and to maintain the dopant concentration in the predetermined layer to be a predetermined concentration before the heating is treated; and forming an epitaxially grown film to fill the trench. The conductivity type of the dopant contained in the non-oxidizing and non-nitridizing atmosphere is the same as that of the dopant initially contained in the predetermined layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.