Localized heating and cooling of substrates
US7037797B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2000 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Mar 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions of a wafer to control the temperature of such regions during one or more stages of a heat cycle. In one embodiment, gas nozzles eject gas towards the bottom of the wafer to provide localized temperature control. In another embodiment, a transparent gas pipe containing a variety of gas outlets distributes gas onto the top surface of the wafer to provide localized temperature control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.