Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride
US7037806B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2005 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Feb 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor-on-insulator semiconductor substrate is disclosed that includes providing first and second semiconductor substrates. Either oxygen or nitrogen is introduced into a region adjacent the surface of the first semiconductor substrate and a rare earth is introduced into a region adjacent the surface of the second semiconductor substrate. The surface of the first semiconductor substrate is bonded to the surface of the second semiconductor substrate in a process that includes annealing to react either the oxygen or the nitrogen with the rare earth to form an interfacial insulating layer of either rare earth oxide or rare earth nitride. A portion of either the first semiconductor substrate or the second semiconductor substrate is removed and the surface polished to form a thin crystalline active layer on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.