Translucent LLC
65Patents
53Active
65Granted
59Portfolio score
Filing activity: Sep 17, 2003 → Jan 12, 2024 · 19 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7217636B1 | Semiconductor-on-insulator silicon wafer | Electricity | 270 | Expired |
| US7807917B2 | Thermoelectric and pyroelectric energy conversion devices | Electricity | 29 | Active |
| US8106381B2 | Semiconductor structures with rare-earths | Electricity | 24 | Active |
| US7037806B1 | Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride | Electricity | 19 | Expired |
| US7018484B1 | Semiconductor-on-insulator silicon wafer and method of formation | Electricity | 16 | Expired |
| US7023011B2 | Devices with optical gain in silicon | Electricity | 15 | Expired |
| US8796121B1 | Stress mitigating amorphous SiO2 interlayer | Electricity | 14 | Active |
| US7253080B1 | Silicon-on-insulator semiconductor wafer | Electricity | 12 | Expired |
| US7416959B2 | Silicon-on-insulator semiconductor wafer | Electricity | 12 | Active |
| US8846504B1 | GaN on Si(100) substrate using epi-twist | Electricity | 11 | Active |
| US7928317B2 | Thin film solar cell | Emerging Cross-Sectional Technologies | 11 | Active |
| US7655327B2 | Composition comprising rare-earth dielectric | Electricity | 9 | Active |
| US7675117B2 | Multi-gate field effect transistor | Electricity | 8 | Active |
| US8501635B1 | Modification of REO by subsequent III-N EPI process | Electricity | 8 | Active |
| US8071872B2 | Thin film semi-conductor-on-glass solar cell devices | Emerging Cross-Sectional Technologies | 8 | Active |
| US7605531B1 | Full color display including LEDs with rare earth active areas and different radiative transistions | Electricity | 8 | Active |
| US8748900B1 | Re-silicide gate electrode for III-N device on Si substrate | Electricity | 7 | Active |
| US8878188B2 | REO gate dielectric for III-N device on Si substrate | Electricity | 7 | Active |
| US8633569B1 | AlN inter-layers in III-N material grown on REO/silicon substrate | Electricity | 7 | Active |
| US7476600B1 | FET gate structure and fabrication process | Electricity | 7 | Active |
| US8636844B1 | Oxygen engineered single-crystal REO template | Electricity | 6 | Active |
| US9360565B2 | Radiation detector and fabrication process | Physics | 5 | Active |
| US7365357B2 | Strain inducing multi-layer cap | Electricity | 5 | Expired |
| US7902546B2 | Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon | Electricity | 5 | Expired |
| US8823055B2 | REO/ALO/A1N template for III-N material growth on silicon | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.