Single mask control of doping levels

US7037814B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Andy Strachan · Santa Clara, US
• Peter J. Hopper · San Jose, US
• Philipp Lindorfer · San Jose, US

Key dates

• Filing date: Oct 10, 2003
• Grant date: May 2, 2006
• Expiry date: Oct 31, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26513
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the mask. The diffusion of dopant is completed by making use of an annealing stage.