Methods for selective integration of airgaps and devices made by such methods

US7037851B2 · kind B2 · utility

Assignee

• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

• Jean Paul Gueneau de Mussy · Ixelles - Elsene, BE
• Gerald Beyer · Heverlee, BE
• Karen Maex · Herent, BE

Key dates

• Filing date: Sep 30, 2004
• Grant date: May 2, 2006
• Expiry date: Sep 30, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method for the production of airgaps in a semiconductor device, the semiconductor device comprising a stack of layers, the stack of layers comprising at least one iteration of a sub-stack of layers.