Method of forming fluorine-doped low-dielectric-constant insulating film
US7037855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Oct 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4 as a silicon source gas, SiF4 as a fluorine source gas, and CO2 as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2 in the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.