Inventor · Tokyo, JP

Ryu Nakano

29Patents
15h-index
31Co-inventors
77Inventor score

Filing activity: Aug 31, 2004 → Dec 8, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9123510B2 Method for controlling in-plane uniformity of substrate processed by plasma-assisted process Electricity 503 Active
US8298951B1 Footing reduction using etch-selective layer Electricity 501 Active
US8742668B2 Method for stabilizing plasma ignition Electricity 501 Active
US8679958B2 Methods for forming doped silicon oxide thin films Electricity 463 Active
US9153441B2 Methods for forming doped silicon oxide thin films Electricity 456 Active
US9368352B2 Methods for forming doped silicon oxide thin films Electricity 452 Active
US9284642B2 Method for forming oxide film by plasma-assisted processing Electricity 451 Active
US9663857B2 Method for stabilizing reaction chamber pressure Emerging Cross-Sectional Technologies 450 Active
US9564314B2 Methods for forming doped silicon oxide thin films Electricity 449 Active
US9343308B2 Method for trimming carbon-containing film at reduced trimming rate Electricity 447 Active
US10043661B2 Method for protecting layer by forming hydrocarbon-based extremely thin film Electricity 447 Active
US9464352B2 Low-oxidation plasma-assisted process Electricity 447 Active
US7712435B2 Plasma processing apparatus with insulated gas inlet pore Electricity 404 Active
US9875893B2 Methods for forming doped silicon oxide thin films Electricity 402 Active
US10147600B2 Methods for forming doped silicon oxide thin films Electricity 399 Active
US7972961B2 Purge step-controlled sequence of processing semiconductor wafers Electricity 4 Active
US11482418B2 Substrate processing method and apparatus Electricity 2 Active
US10510530B2 Methods for forming doped silicon oxide thin films Electricity 2 Active
US9673092B2 Film forming apparatus, and method of manufacturing semiconductor device Electricity 2 Active
US7037855B2 Method of forming fluorine-doped low-dielectric-constant insulating film Electricity 1 Expired
US11527400B2 Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane Electricity 1 Active
US10784105B2 Methods for forming doped silicon oxide thin films Electricity 1 Active
US11302527B2 Methods for forming doped silicon oxide thin films Electricity 0 Active
US11970769B2 Cyclical deposition methods Chemistry; Metallurgy 0 Active
US12033849B2 Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.