Semiconductor device
US7038251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2005 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jan 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
A semiconductor device has a structure reducing resistances to a high frequency current. The semiconductor device includes a semi-insulating substrate, a first n-type layer made of a compound semiconductor, and a first p-type layer made of a compound semiconductor in which a signal current flows in a lateral direction, parallel to the semi-insulating substrate. The first p-type layer is sandwiched between the semi-insulating substrate and the first n-type layer. A second n type layer made of a compound semiconductor is between the semi-insulating substrate and the first p type layer. An alternating current component of the signal current flows through the second n type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.