Method for reducing or eliminating de-lamination of semiconductor wafer film layers during a chemical mechanical planarization process
US7040952B1 · kind B1 · utility
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Key dates
| Filing date | Jun 28, 2002 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Oct 14, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for preventing de-lamination of semiconductor wafer film stacks during a linear belt-type chemical mechanical planarization (CMP) process is provided. The method implements a pulsed polishing head rotation during a CMP process to maintain a slurry distribution across the width of a belt pad. The slurry distribution is maintained in a manner that prevents de-lamination of a wafer film having weak adhesion characteristics. Thus, the pulsed polishing head rotation implemented by the method reduces de-lamination of low-K material film layers during the CMP process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.