Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers

US7040966B2 · kind B2 · utility

Assignees

• Applied Materials, Inc. · US
• International Business Machines Corporation · US

Inventors

• Joseph F. Salfelder · Pleasant Valley, US
• Wayne R. Swart · Tivoli, US
• Gopalakrishna B. Prabhu · San Jose, US
• Srinivas R. Mirmira · San Jose, US
• Laertis Economikos · Hopewell Junction, US
• Fen F. Jamin · Wappingers Falls, US
• Donald J. Delehanty · Wappingers Falls, US
• Daniel Heenan · Lagrangeville, US
• Joseph M. Danza · Newburgh, US

Key dates

• Filing date: Apr 16, 2004
• Grant date: May 9, 2006
• Expiry date: Sep 8, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31053
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.