Method of producing high quality relaxed silicon germanium layers
US7041170B2 · kind B2 · utility
9Cited by
5References
38Claims
0Family size
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Key dates
| Filing date | Mar 19, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Oct 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.