Technique for enhancing accuracy of critical dimensions of a gate electrode by using characteristics of an ARC layer

US7041434B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Jan Raebiger · Dresden, DE
• Andre Holfeld · Wilthen, DE

Key dates

• Filing date: Mar 30, 2004
• Grant date: May 9, 2006
• Expiry date: Mar 30, 2024

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/40
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In an improved technique for adjusting an etch time of a resist trim process, additional measurement data representing an optical characteristic, such as the reflectivity of an anti-reflective coating, is used. Since the initial thickness of the resist mask features may significantly depend on the optical characteristics of the anti-reflective coating, the additional measurement data allow compensation for process variations more efficiently as compared to the conventional approach.