Film forming method for depositing a plurality of high-k dielectric films
US7041546B2 · kind B2 · utility
3Cited by
4References
4Claims
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Key dates
| Filing date | Aug 13, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Dec 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.