Method for manufacturing semiconductor device
US7041549B2 · kind B2 · utility
8Cited by
7References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 28, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a semiconductor device, a gate insulating film and a gate electrode are first formed on a substrate. Next, Ge ions, Si ions, or the like are implanted to make the surface of the substrate amorphous, using the gate electrode as a mask. Thereafter, impurities such as B ions or the like, for forming a doped region, are implanted into the amorphous area of the substrate, using the gate electrode as a mask. Furthermore, the doped region is irradiated with visible light for a short period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.