Device and a method for forming a capacitor device
US7041551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.