Composite intermetal dielectric structure including low-k dielectric material
US7041574B2 · kind B2 · utility
2Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Jul 19, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a composite intermetal dielectric structure is provided. An initial intermetal dielectric structure is provided, which includes a first dielectric layer and two conducting lines. The two conducting lines are located in the first dielectric layer. A portion of the first dielectric layer is removed between the conducting lines to form a trench. The trench is filled with a second dielectric material. The second dielectric material is a low-k dielectric having a dielectric constant less than that of the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.