Patent · US Expired

Process for manufacturing a substrate and associated substrate

US7041577B2 · kind B2 · utility

3Cited by

7References

30Claims

0Family size

Assignee

S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

Olivier Rayssac · Grenoble, FR
Fabrice Letertre · Grenoble, FR

Key dates

Filing date	Oct 22, 2004
Grant date	May 9, 2006
Priority date	—
Expiry date	Oct 22, 2024

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A second layer is then bonded to un-etched portions of the first layer to cover the etched zone and to form a closed cavity. The first layer is detached from the temporary support at the weak bond by providing a raised pressure in the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.