Semiconductor light-emitting device
US7042012B2 · kind B2 · utility
19Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Apr 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
An insulation film 150 made of SiO2 is formed on a p-type layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.