Semiconductor device
US7042037B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Nov 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.