Backside thinning of image array devices

US7042060B2 · kind B2 · utility

Assignee

• INTEVAC, INC. · US

Inventors

• Kenneth Costello · Union City, US
• Kevin Fairbairn · Los Gatos, US
• David Ward Brown · Lansdale, US
• Yun H. Chung · Toledo, US
• Patricia Gober · Santa Clara, US
• Edward Yin · Cupertino, US

Key dates

• Filing date: Jul 15, 2004
• Grant date: May 9, 2006
• Expiry date: Oct 14, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8057

Abstract

Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.