Phase-change memory and method having restore function
US7042760B2 · kind B2 · utility
39Cited by
7References
50Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Sep 18, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change memory device includes a phase-change memory cell having a volume of material which is programmable between amorphous and crystalline states. A write current source selectively applies a first write current pulse to program the phase-change memory cell into the amorphous state and a second write current pulse to program the phase-change memory cell into the crystalline state. The phase-change memory device further includes a restore circuit which selectively applies the first current pulse to the phase-change memory cell to restore at least an amorphous state of the phase-change memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.