Method of producing an electrode configuration and method of electrically contacting the electrode configuration

US7045070B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Volker Weinrich · Paris, FR
• Manfred Engelhardt · Feldkirchen-Westerham, DE
• Werner Pamler · Munich, DE
• Hermann Wendt · Grasbrunn, DE

Key dates

• Filing date: Aug 24, 2000
• Grant date: May 16, 2006
• Expiry date: Jun 23, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32139
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The electrode configuration includes at least one structured layer. A mask is produced on the layer to be structured and the layer is dry etched. The mask is at least slightly etchable by dry etching. The mask contains a metal silicide, a metal nitride or a metal oxide.