Mask with programmed defects and method for the fabrication thereof

US7045254B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Dettmann · Schliersee, DE
• Gunter Antesberger · Birkenfeld, DE
• Jan Heumann · Birkenfeld, DE
• Mario Hennig · Dresden, DE

Key dates

• Filing date: Dec 2, 2002
• Grant date: May 16, 2006
• Expiry date: Apr 28, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/72
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A mask, and in particular a phase shift product mask, utilizes predetermined defects being produced during the fabrication thereof in the so-called “second layer” process. The defects are identified by markers in their direct vicinity. The markers are quadrangular and indicate, by virtue of their number in combination with their configuration, information about the respectively assigned defect, such as, for example, defect type, defect size, etc.