Metal plating method, pretreatment agent, and semiconductor wafer and semiconductor device obtained using these
US7045461B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Mar 20, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/1879
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Resin cloths, powders, specular bodies and other objects resistant to conventional plating can be plated with metals by a simple method.According to the metal plating method of the present invention, electroless plating is performed after the surface of a object to be plated is treated with a pretreatment agent obtained by reacting or mixing in advance a noble metal compound (catalyst) with a silane-coupling agent having functional groups capable of capturing metals. According to this method, metal plating can be securely applied to powders, resin cloths, semiconductor wafers, and other specular bodies. Moreover, the problem of the insufficient coverage of the seed layer on the inside walls of vias and trenches during the formation of fine wiring can be addressed by applying this method to semiconductor wafers. The silane-coupling agent may be a compound containing azole groups, preferably an imidazole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.