Via reactive ion etching process
US7045464B1 · kind B1 · utility
6Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Nov 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of etching a dielectric layer and a cap layer over a conductor level to open a via to the conductor. The methods include the provision of tetrafluoro methane (CF4) in a photoresist strip. In addition, the methods may provide an increased amount of tetrafluoro methane (CF4) in a dielectric layer etch, and trifluoro methane (CHF3) in a cap layer etch. The invention provides higher yield, more predictable etch rates, faster processing, and removes the need for an ash step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.