Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing
US7045837B2 · kind B2 · utility
3Cited by
4References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 31, 2003 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Sep 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.