Manufacturing method of polymetal gate electrode
US7049187B2 · kind B2 · utility
11Cited by
11References
27Claims
0Family size
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Key dates
| Filing date | Oct 31, 2001 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Jan 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.