In-situ-etch-assisted HDP deposition using SiF4
US7049211B2 · kind B2 · utility
3Cited by
129References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2005 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Mar 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.