Method for enhancing silicon dioxide to silicon nitride selectivity
US7049244B2 · kind B2 · utility
59Cited by
101References
114Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 6, 2001 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Feb 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for controlling the plasma etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by (1) maintaining various portions of the etch chamber at elevated temperatures, and/ox (2) using an etch chemistry having a fluorohydrocarbon gas containing at least as many hydrogen atoms as fluorine atoms, preferably CH2F2 or CH3F.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.