Patent · US Expired

Semiconductor memory cell and semiconductor memory device

US7049628B2 · kind B2 · utility

1Cited by

10References

56Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Günter Schmid · Hemhofen, DE
Marcus Halik · Erlangen, DE
Hagen Klauk · Erlangen, DE
Christine Dehm · Koblenzer Straße, DE
Thomas Haneder · Hersbruck, DE
Thomas Mikolajick · Birkenfeld, DE

Key dates

Filing date	Mar 24, 2003
Grant date	May 23, 2006
Priority date	—
Expiry date	May 11, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/701
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The semiconductor memory cell is characterized in that at least one modulation region is provided between a first gate electrode of the gate electrode configuration and the insulation region, and in that the modulation region has or is formed from a material or modulation material having electrical and/or further material properties that can be modulated in a controllable manner between at least two states in such a way that, in accordance with these states of the modulation material or of the modulation region, the channel region can be influenced electromagnetically, in particular for a given electrical potential difference between the first gate electrode and the source/drain regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.