Production method for semiconductor crystal and semiconductor luminous element
US7052979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2002 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Feb 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as the size of each projection part, arranging interval between each projection part and crystal growth. So when the thickness of the substrate layer is sufficiently larger compared with the height of the projection part, inner stress or outer stress become easier to act intensively to the projection part. As a result, such stress especially functions as shearing stress toward the projection part. When the shearing stress becomes larger, the projection part is ruptured. So utilizing the shearing stress enables to separate the base substrate and the substrate layer easily. The larger the cavities are formed, the more stress tends to concentrate to the projection parts, to thereby enable to separate the base substrate and the substrate layer more securely.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.