Sealed pores in low-k material damascene conductive structures
US7052990B2 · kind B2 · utility
22Cited by
7References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 3, 2003 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Sep 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide layer is used to seal pores in porous low-dielectric constant materials, thus preventing the migration of subsequently deposited copper materials into the porous low-dielectric constant materials in damascene processes. The oxide layer is deposited over the inner surface of at least one pore along a sidewall of the patterned low-dielectric constant material. In one embodiment, the oxide layer is deposited using atomic layer deposition (ALD), and the oxide layer comprises SiO2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.