Photoresist conditioning with hydrogen ramping
US7053003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Oct 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.