Adaptive programming technique for a re-writable conductive memory device
US7054183B2 · kind B2 · utility
85Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2005 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Sep 2, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming circuit is provided. As a conductive memory cell is programmed, its resistance changes. The provided programming circuit monitors the changing resistance while programming the memory cell. The programming circuit can be used to only program the memory cell for as long as programming is actually needed. Additionally, the programming circuit can be used to only program the memory cell when it has a value that needs to be changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.