Method for isotropic etching of copper
US7056648B2 · kind B2 · utility
18Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Mar 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.