Avalanche diode with breakdown voltage controlled by gate length

US7056761B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Ann Concannon · San Jose, US
• Peter J. Hoppet · San Jose, US
• Marcel ter Beek · Pleasanton, US

Key dates

• Filing date: Mar 14, 2003
• Grant date: Jun 6, 2006
• Expiry date: Mar 14, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/983

Abstract

In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate.