Stacked gate flash memory device and method of fabricating the same
US7056792B2 · kind B2 · utility
6Cited by
7References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 6, 2004 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Apr 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6894
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.