Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
US7056833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Jan 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.