PMOS based LVTSCR and IGBT-like structure

US7057215B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Ann Concannon · San Jose, US
• Peter J. Hopper · San Jose, US
• Marcel ter Beek · Pleasanton, US

Key dates

• Filing date: Aug 2, 2002
• Grant date: Jun 6, 2006
• Expiry date: Aug 4, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/80

Abstract

In an ESD protection device making use of a LVTSCR-like structure or an IGBT-like structure, negative polarity over-voltage protection is achieved by providing a LVTSCR-like structure or IGBT-like structure that defines a PMOS device.