Non-volatile memory and control with improved partial page program capability
US7057939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2004 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | May 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5646
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.