Method and system for temperature compensation for memory cells with temperature-dependent behavior
US7057958B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Jan 7, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0069
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The preferred embodiments described herein relate to a method and system for temperature compensation for memory cells with temperature-dependent behavior. In one preferred embodiment, at least one of a first temperature-dependent reference voltage comprising a negative temperature coefficient and a second temperature-dependent reference voltage comprising a positive temperature coefficient is generated. One of a wordline voltage and a bitline voltage is generated from one of the at least one of the first and second temperature-dependent reference voltages. The other of the wordline and bitline voltages is generated, and the wordline and bitline voltages are applied across a memory cell. Other methods and systems are disclosed for sensing a memory cell comprising temperature-dependent behavior, and each of the preferred embodiments can be used alone or in combination with one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.