Bendik Kleveland
34Patents
17h-index
27Co-inventors
81Inventor score
Filing activity: Mar 29, 1995 → Jun 30, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6631085B2 | Three-dimensional memory array incorporating serial chain diode stack | Physics | 168 | Expired |
| US6486728B2 | Multi-stage charge pump | Electricity | 166 | Expired |
| US7180949B2 | High-speed chip-to-chip communication interface | Electricity | 149 | Expired |
| US7057958B2 | Method and system for temperature compensation for memory cells with temperature-dependent behavior | Physics | 145 | Expired |
| US5898321A | Method and apparatus for slew rate and impedance compensating buffer circuits | Electricity | 103 | Expired |
| US6574145B2 | Memory device and method for sensing while programming a non-volatile memory cell | Physics | 82 | Expired |
| US6816410B2 | Method for programming a three-dimensional memory array incorporating serial chain diode stack | Physics | 73 | Expired |
| US5969929A | Distributed ESD protection device for high speed integrated circuits | Electricity | 62 | Expired |
| US6515904B2 | Method and system for increasing programming bandwidth in a non-volatile memory device | Physics | 61 | Expired |
| US7219271B2 | Memory device and method for redundancy/self-repair | Physics | 55 | Expired |
| US6784517B2 | Three-dimensional memory array incorporating serial chain diode stack | Physics | 54 | Expired |
| US5528168A | Power saving terminated bus | Electricity | 45 | Expired |
| US6954394B2 | Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditions | Physics | 42 | Expired |
| US7482888B1 | Fast startup resonant element oscillator | Electricity | 29 | Active |
| US7383476B2 | System architecture and method for three-dimensional memory | Physics | 26 | Expired |
| US9037928B2 | Memory device with background built-in self-testing and background built-in self-repair | Physics | 22 | Active |
| US7212454B2 | Method and apparatus for programming a memory array | Physics | 21 | Expired |
| US6767816B2 | Method for making a three-dimensional memory array incorporating serial chain diode stack | Physics | 17 | Expired |
| US6567304B1 | Memory device and method for reliably reading multi-bit data from a write-many memory cell | Physics | 16 | Expired |
| US7570035B2 | Voltage regulator with a hybrid control loop | Physics | 14 | Active |
| US7759916B2 | Regulator with device performance dynamic mode selection | Emerging Cross-Sectional Technologies | 13 | Active |
| US6724665B2 | Memory device and method for selectable sub-array activation | Physics | 12 | Expired |
| US6754102B2 | Method for programming a three-dimensional memory array incorporating serial chain diode stack | Physics | 12 | Expired |
| US9361196B2 | Memory device with background built-in self-repair using background built-in self-testing | Physics | 8 | Active |
| US8219778B2 | Virtual memory interface | Physics | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.