SRAM devices utilizing tensile-stressed strain films and methods for fabricating the same

US7060549B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Mark Craig · Brooklyn, US
• Karsten Wieczorek · Dresden, DE
• Manfred Horstmann · Dresden, DE

Key dates

• Filing date: Jul 1, 2005
• Grant date: Jun 13, 2006
• Expiry date: Jul 1, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

SRAM devices utilizing tensile-stressed strain films and methods for fabricating such SRAM devices are provided. An SRAM device, in one embodiment, comprises an NFET and a PFET that are electrically coupled and physically isolated. The PFET has a gate region, a source region, and a drain region. A tensile-strained stress film is disposed on the gate region and at least a portion of the source region and the drain region of the PFET. A method for fabricating a cell of an SRAM device comprises fabricating an NFET and a PFET overlying a substrate. The PFET and the NFET are electically coupled and are physically isolated. A tensile-strained stress film is deposited on the gate region and at least a portion of the source region and the drain region of the PFET.