Semiconductor device and method of manufacturing the same
US7060555B2 · kind B2 · utility
4Cited by
10References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 21, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Jul 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.