Fabrication of high-density capacitors for mixed signal/RF circuits
US7060557B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2002 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Sep 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating a capacitor on a semiconductor substrate is disclosed. The method may include simultaneously forming at least one via and at least one upper capacitor plate opening in a first dielectric layer having an underlying cap dielectric layer deposited over a first material region having a first conductive material within a conductive region and forming a trench above the via. The underlying cap dielectric layer may be modified in a way that increases its dielectric constant as a result of simultaneously be heated by a heat source and impinged with and energy beam. The method may also include filling the via, trench, and upper capacitor plate opening with a second conductive material resulting in an integrated circuit structure and employing CMP to remove any excess second conductive material from the integrated circuit structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.