Method for fabricating a field-effect transistor having a floating gate

US7060558B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hofmann · Munich, DE
• Georg Tempel · Zorneding, DE
• Robert Strenz · Radebeul, DE
• Robert Wiesner · Chandler, US

Key dates

• Filing date: Dec 16, 2002
• Grant date: Jun 13, 2006
• Expiry date: Apr 23, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

In the course of a method for fabricating a field-effect transistor having a floating gate, a structure is formed which has uncovered sidewalls of a layer made of the material for forming the floating gate and which is exposed to an oxidizing atmosphere in order to coat the sidewalls. At the same time, other regions of the structure have an insulating oxide layer. At a point in time prior to the action of an oxidizing atmosphere, nitrogen is implanted into the material of the floating gate in a quantity that appreciably reduces the oxidation at the sidewalls thereof.