Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization
US7060585B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2005 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Feb 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method utilizing in-place bonding and amorphization/templated recrystallization (ATR) is provided for making bulk and semiconductor-on-insulator substrates having coplanar semiconductor layers of different crystallographic orientations. First and second semiconductor layers having different orientations are bonded to opposite sides of a sacrificial spacer layer. Selected areas in one of the semiconductor layers are amorphized; in-place bonding is then performed in a wet etch solution to remove the sacrificial layer and leave the semiconductor layers bonded to each other. The amorphized regions are recrystallized across the bonded interface, using the semiconductor on the non-amorphized side of the bonded interface as a template.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.