PCMO thin film with resistance random access memory (RRAM) characteristics
US7060586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Oct 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
PrCaMnO (PCMO) thin films with predetermined memory-resistance characteristics and associated formation processes have been provided. In one aspect the method comprises: forming a Pr3+1−xCa2+xMnO thin film composition, where 0.1<x<0.6; in response to the selection of x, varying the ratio of Mn and O ions as follows: O2−(3±20%); Mn3+((1−x)±20%); and, Mn4+(x±20%). When the PCMO thin film has a Pr3+0.70Ca2+0.30Mn3+0.78Mn4+0.22O2−2.96 composition, the ratio of Mn and O ions varies as follows: O2−(2.96); Mn3+((1−x)+8%); and, Mn4+(x−8%). In another aspect, the method creates a density in the PCMO film, responsive to the crystallographic orientation. For example, if the PCMO film has a (110) orientation, a density is created in the range of 5 to 6.76 Mn atoms per 100 Å2 in a plane perpendicular to the (110) orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.