Memory device and method of manufacturing including deuterated oxynitride charge trapping structure
US7060594B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Oct 19, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
A method for manufacturing a charge storage stack including a bottom dielectric layer, a charge trapping structure on the bottom dielectric layer, and a top dielectric layer, each comprising silicon oxynitride, are formed using reactant gases that comprise hydrogen, where the hydrogen comprises at least 90 percent deuterium isotope. The bottom dielectric layer, charge trapping structure, and top dielectric layer each have respective relative concentrations of oxygen and nitrogen. The relative concentration of nitrogen in the charge trapping structure is high enough for the material to act as a charge trapping structure with an energy gap that is lower than the energy gaps in the bottom dielectric layer and the top dielectric layer. The presence of oxygen in the charge trapping structure reduces the number of available dangling bonding sites, and thereby reduces the number of hydrogen inclusions in the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.